The sputtering process of tungsten sputtering target material uses gas discharge to generate gas ionization. Its positive ions bombard the cathode target (tungsten target) at high speed under the action of an electric field, and the tungsten atoms hit the cathode target and fly to the surface of the plated atoms to deposit a film.
In the modern microelectronics industry, ultra-high-purity tungsten sputtering targets have special uses. They are used as resistance layers and diffusion barrier layers on large-scale integrated circuits, and WN made by reactive sputtering is used as a superconducting layer. WSi2 layer made by co-sputtering of W and Si is used as gate material in MOS.
