The trace and ultra-trace elements in high-purity metals essentially refer to the impurity elements contained, which directly affect the deformability and use performance of refractory metals. Take the high-purity tungsten target as an example. According to the impact on the performance of microelectronic devices, its content requirements are very strict. For example, VLSI has very strict requirements for the content of radioactive elements U and Th, but in conventional tungsten targets It is usually not analyzed in material production.
The radioactive decay of the radioactive elements U and Th causes the deterioration of the data storage capacity and affects the increase of the storage density in the VLSI substrate. Gases O, N, H and carbon element C also have an impact on its performance: oxide volatilization leads to defects; the generation of nitrides, carbides and hydrides may become the "source" of failure of highly integrated components.
